CMLT5088EM surface mount dual, matched npn silicon transistors description: the central semiconductor CMLT5088EM consists of two individual, isolated 5088e npn silicon transistors with matched v be(on) characteristics. this device is designed for applications requiring high gain and low noise. marking code: 88m maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5.0 v continuous collector current i c 100 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per transistor: (t a =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =20v 50 na i ebo v eb =3.0v 50 na bv cbo i c =100a 50 135 v bv ceo i c =1.0ma 50 65 v bv ebo i e =100a 5.0 8.7 v v ce(sat) i c =10ma, i b =1.0ma 45 100 mv v ce(sat) i c =100ma, i b =10ma 110 400 mv v be(sat) i c =10ma, i b =1.0ma 700 800 mv h fe v ce =5.0v, i c =0.1ma 300 430 900 h fe v ce =5.0v, i c =1.0ma 300 435 h fe v ce =5.0v, i c =10ma 300 430 h fe v ce =5.0v, i c =100ma 50 125 f t v ce =5.0v, i c =500a, f=20mhz 100 mhz c ob v cb =5.0v, i e =0, f=1.0mhz 4.0 pf c ib v be =0.5v, i c =0, f=1.0mhz 15 pf h fe v ce =5.0v, i c =1.0ma, f=1.0khz 350 1400 nf v ce =5.0v, i c =100a, r s =10k f=10hz to 15.7khz 3.0 db matching characteristics: symbol test conditions min max units | v be1 -v be2 | v ce =5.0v, i c =1.0a 10 mv | v be1 -v be2 | v ce =5.0v, i c =5.0a 10 mv | v be1 -v be2 | v ce =5.0v, i c =10a 10 mv | v be1 -v be2 | v ce =5.0v, i c =100a 10 mv features: ? transistor pair matched for v be(on) ? device is halogen free by design sot-563 case r1 (20-january 2010) www.centralsemi.com
CMLT5088EM surface mount dual, matched npn silicon transistors sot-563 case - mechanical outline lead code: 1) emitter q1 2) base q1 3) collector q2 4) emitter q2 5) base q2 6) collector q1 marking code: 88m pin configuration www.centralsemi.com r1 (20-january 2010)
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